Advances in Solid State Physics Volume 44 (v. 44) by Bernhard Kramer
By Bernhard Kramer
This quantity forty four of Advances in stable kingdom Physics includes the written types of lots of the invited lectures of the Spring assembly of the Condensed subject Physics part of the Deutsche Physikalische Gesellschaft held from March eight to twelve, 2004 in Regensburg, Germany. some of the topical talks given on the quite a few and intensely vigorous symposia also are incorporated. they've got coated tremendous attention-grabbing and well timed matters. therefore the publication really displays the prestige of the sphere of strong nation physics in 2004, and exhibits its significance, not just in Germany but in addition across the world.
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Additional info for Advances in Solid State Physics Volume 44 (v. 44)
This energy diﬀerence is larger than the band-gap energy of the bulk. Therefore, the band gap at the surface of the ﬁlm must be larger than that of the bulk. 04 eV. More evidence for the surface bad gap widening stems from recent highly resolved cathodoluminescence experiments  that show emission lines with higher photon energies in regions that could be identiﬁed with the SDL. , Refs. [14,34,38]), there appears more and more an agreement that the surface band gap widening going along with the SDL is the primary and unique feature of the Cu(In,Ga)Se2 surface.
6, 131 (1999). 29, 34 15. D. Rudmann, A. F. Cunha, M. Kaelin, F. Kurdesau, H. Zogg, A. N. Tiwari, G. Bilger, Appl. Phys. Lett. 8, 1129 (2004). 29 16. L. Kronik, D. Cahen, H. W. Schock, Adv. Mat. 10, 31 (1998). 29, 36 17. R. Klenk, T. Walter, H. W. Schock, D. Cahen, Adv. Mat. 5, 114 (1993). 29 18. J. Kessler, K. O. Velthaus, M. Ruckh, R. Laichinger, H. W. Schock, D. Lincot, R. Ortega, J. Vedel, in: Proc. 6th. Int. Photovoltaic Solar Energy Conf. (Oxford IBH Publishing, New Delhi, India, 1992) p.
As compensating donors the Se-vacancy VSe as well as the double donor InCu are considered. Recent combined Hall and photoluminescence (PL) measurements on CuGaSe2  and CuInSe2  epitaxial ﬁlms unveiled two shallow acceptor states and one compensating Electronic Properties of Cu(In,Ga)Se2 Solar Cells 35 donor in both materials. The expected strong tendency of Cu-chalcopyrites for self-compensation was experimentally veriﬁed recently by PL analysis of CuGaSe2 epitaxial and polycrystalline ﬁlms .