Debye Screening Length: Effects of Nanostructured Materials by Kamakhya Prasad Ghatak

By Kamakhya Prasad Ghatak

This monograph completely investigates the Debye Screening size (DSL) in semiconductors and their nano-structures. The fabrics thought of are quantized buildings of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, under pressure fabrics, Bismuth, hole, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic fabrics and their quantum constrained opposite numbers is studied within the presence of sturdy gentle waves and severe electrical fields at the foundation of newly formulated electron dispersion legislation that keep watch over the stories of such quantum influence units. The feedback for the experimental choice of 2nd and 3D DSL and the significance of size of band hole in optoelectronic fabrics less than severe integrated electrical box in nano units and robust exterior photograph excitation (for measuring photon triggered actual houses) have additionally been mentioned during this context. The impression of crossed electrical and quantizing magnetic fields at the DSL and the DSL in seriously doped semiconductors and their nanostructures has been investigated. This monograph includes a hundred and fifty open study difficulties which shape the crucial a part of the textual content and are beneficial for either PhD scholars and researchers within the fields of solid-state sciences, fabrics technology, nano-science and know-how and allied fields as well as the graduate classes in smooth semiconductor nanostructures.

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In Sect. 4, the DSL in QWs of Bi has been formulated in accordance with the aforementioned energy band models for the purpose of relative assessment. Besides, under certain limiting conditions all the results for all the models of 2D systems are reduced to the well-known result of the DSL in QWs of wide gap materials. This above statement exhibits the compatibility test of our theoretical analysis. Lead chalcogenides (PbTe, PbSe, and PbS) are IV–VI non-parabolic semiconductors whose studies over several decades have been motivated by their importance in infrared IR detectors, lasers, light-emitting devices, photo-voltaic, and high temperature thermo-electrics [69–73].

The III–V compounds find applications in infrared detectors [30], quantum dot light emitting diodes [31], quantum cascade lasers [32], QWs wires [33], optoelectronic sensors [34], high electron mobility transistors [35], etc. The electron energy spectrum of III–V semiconductors can be described by the three- and two-band models of Kane [36, 37], together with the models of Stillman et al. [38], Newson and Kurobe [39] and Palik et al. [40] respectively. In this context it may be noted that the ternary and quaternary compounds enjoy the singular position in the entire spectrum of optoelectronic materials.

Given by ffi h i1=2 ! AÆ ðE; nz Þ ¼ 2ðap0 Þ2 ð"ko Þ2 þ 2a0o ðEÀEnz5 Þ Æ "ko ð"ko Þ2 þ 4a0o ðEÀEnz5 Þ o The surface electron concentration can be expressed in this case as nz max Z 1 À2gv X o n2D ¼ ½Aþ ðEFs ; nz Þ þ AÀ ðEFs ; nz ފ ff0 ðEÞgdE 2 oE 2ð2pÞ nz¼1 Enz 5 ð1:44Þ where, f0 ðEÞ is the Fermi-Dirac occupation probability factor. 44) we get zmax gv mÃ? kB T X F0 ðgnz8 Þ p "h2 nz ¼1 n n2D ¼ ð1:45Þ where, gnz8 ¼ ðEFs À Enz5 þ ð"kÞ2 mÃ? 45) we get nzmax e2 mÃ? 4 The DSL in QWs of Bismuth (a) The McClure and Choi Model The dispersion relation of the carriers in Bi can be written, following the McClure and Choi [68], as &  ' p2y p2y p4y a ap2x p2y p2 p2 m2 Eð1 þ aEÞ ¼ x þ þ z þ aE 1 À À þ 4m2 m02 4m1 m2 2m1 2m2 2m3 2m2 m02 2 2 apy pz À 4m2 m3 ð1:47Þ where, pi  " hki ; i ¼ x; y; z; m1 ; m2 and m3 are the effective carrier masses at the band-edge along x, y and z directions respectively and m02 is the effective-mass tensor component at the top of the valence band (for electrons) or at the bottom of the conduction band (for holes).

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